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Updated: Mar 7, 2026

Experimental Methods for Trapping Ions Using Microfabricated Surface Ion Traps
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结晶诱导陷状态调节的直接映射及其对氧化物薄膜晶体管在氧化物薄膜晶体管中局部载体移动性的影响

Yuhyeon Oh1, Jeong Eun Oh2, Seunghyo Park1

  • 1Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.

Nano letters
|March 6, 2026
PubMed
概括

氧化薄膜的结晶通过减少深陷陷状态,显著改善AI硬件的电性能. 这提高了移动性和统一性,这对于先进的半导体应用至关重要.

关键词:
印度氧化物 印度氧化物当地陷深度成像系统氧气空缺陷是为了捕捉空缺的氧气.它是多晶体的.扫描噪声显微镜扫描噪声显微镜薄膜晶体管是一种薄膜晶体管.

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