10nm

Youran Hong1, Tianqi Deng2, Xiyao Li1,3

  • 1Center of Electron Microscopy, State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, PR China.

Nature communications
|March 6, 2026
PubMed
概括

纳米电子设备中的表面原子意外地与电子流相抵触,挑战了已有的电迁理论. 在耐火纳米互连中,这种逆风原子运动会影响未来的电子可靠性.