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Updated: Mar 10, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

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第一原则研究d0磁力在SNI2单层中,由P和As杂质诱导

Pham Minh Tan1, Nguyen Thanh Son2, Duy Khanh Nguyen3,4

  • 1Faculty of Fundamental Sciences, Posts and Telecommunications Institute of Technology Hanoi Vietnam.

RSC advances
|March 9, 2026
PubMed
概括

合SnI2单层与 pnictogen 原子诱导d0磁性,产生具有可调节性质的磁性半导体. 这项研究为先进的自旋电子和记忆器件铺平了道路.

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