轨道选择波段工程实现了高zT在p型Ru2Ti1-xHfxSi全Heusler热电器中

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Updated: Mar 11, 2026

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
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Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations

Published on: October 12, 2019

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Fabian Garmroudi1, Illia Serhiienko2, Michael Parzer3

  • 1Materials Physics Applications - Quantum, Los Alamos National Laboratory, Los Alamos, NM, USA. fgarmroudi@lanl.gov.

Nature communications
|March 10, 2026
PubMed
概括

研究人员发现了新的p型--哈芬- (Ru2Ti1−xHfxSi) 全Heusler热电. 这些材料具有0.7的高功率 (zT),推进了热电应用.

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