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Updated: Mar 11, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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在单层MoS2中,由高能电子束辐射诱导的光学活性缺陷状态和山谷去极化

Anagha Gopinath1, Faiha Mujeeb2, Subhabrata Dhar2

  • 1Nanomagnetism and Microscopy Laboratory, Department of Physics, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, Telangana, India. jmohanty@phy.iith.ac.in.

Nanoscale
|March 10, 2026
PubMed
概括

高能电子束可控地在单层二硫化物 (MoS2) 中引入缺陷. 这种缺陷工程影响光学属性和谷极化,为辐射硬化光电子提供了洞察力.

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