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Updated: Mar 12, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

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在FE/AFE双层HZOMem电容器中通过组合诱导的内置偏差进行不对称的极化

Junseok Kim1, Huiseong Shin1, Hyeonjung Park2

  • 1School of Electrical Engineering, College of Engineering, Korea University, Seoul 02841, Korea.

ACS applied materials & interfaces
|March 10, 2026
PubMed
概括

这项研究引入了一种新的HfxZr1-xO2记忆电容器,内置偏差用于不对称的极化控制. 由于其稳定状态和突触行为,该设备显示了神经形态计算的潜力.

关键词:
容量记忆窗口 容量记忆窗口铁电/反铁电二层是什么电容器的 mem 电容器神经形态计算是一种神经形态计算.储水池计算计算的使用方法

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