Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

942
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
942
Characteristics of MOSFET01:17

Characteristics of MOSFET

1.2K
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
1.2K
Bipolar Junction Transistor01:22

Bipolar Junction Transistor

1.7K
Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...
1.7K
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

990
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
990
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.2K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.2K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

743
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
743

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

Safety and efficacy of transcutaneous auricular vagus nerve stimulation in patients with narcolepsy type 1 (TARGET-2): study protocol for a randomised, double-blind, sham-controlled trial.

BMJ open·2026
Same author

Combined T-DNA and CRISPR/Cas9 mutagenesis reveals redundant developmental roles of the Arabidopsis BAG family.

Plant science : an international journal of experimental plant biology·2026
Same author

Correlative Changes in Endogenous Polyamines and Hormones Associated with Aging in Ancient <i>Cinnamomum camphora</i>.

Plants (Basel, Switzerland)·2026
Same author

The association between health literacy and out-of-pocket health expenditure: exploring heterogeneity by chronic disease in Zhejiang, China.

International journal for equity in health·2026
Same author

Conformational Changes of the Knotted Protein 1O6D during Denaturation.

The journal of physical chemistry letters·2026
Same author

Mastering molar mesialization: the role of attachment designs and tipping compensation in clear aligner therapy-a finite element analysis.

BMC oral health·2026

相关实验视频

Updated: Mar 12, 2026

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

10.6K

有机多值电压晶体管通过共平面自组装单层构建

Hongquan Yu1,2, Xinyu Wen1,2, Shikai Deng1,2,3

  • 1State Key Laboratory of Transducer Technology & 2020 X-Lab, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.

ACS applied materials & interfaces
|March 10, 2026
PubMed
概括
此摘要是机器生成的。

多值逻辑 (MVL) 晶体管使用单个p型有机半导体和自组装单层 (SAM) 实现. 这种方法提高了设备的稳定性,并简化了用于高级信息处理的制造.

关键词:
多门电压晶体管有机现场效应晶体管 (OFETs)自组装单层 (SAM) 是一种自组装单层.表面的修改表面的修改这是一个三元逆变器.

更多相关视频

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor
11:17

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor

Published on: February 10, 2014

12.2K
Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
10:45

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

806

相关实验视频

Last Updated: Mar 12, 2026

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

10.6K
Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor
11:17

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor

Published on: February 10, 2014

12.2K
Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
10:45

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

806

科学领域:

  • 有机电子学有机电子学
  • 半导体设备物理学 半导体设备物理
  • 材料科学是一种材料科学.

背景情况:

  • 多值逻辑 (MVL) 对后摩尔计算至关重要,旨在增加信息密度和减少复杂性.
  • 传统的MVL设备依赖p-n异质连接,但n型有机半导体 (OSC) 的环境稳定性较差,限制了可靠性.
  • 需要稳定可靠的MVL设备架构,与缩小尺寸兼容.

研究的目的:

  • 通过使用单个p型有机半导体来实现多门电压 (多VTH) 晶体管的新方法.
  • 通过提高稳定性和简化制造,克服传统基于异质连接的MVL设备的局限性.
  • 探索共平面自组装单层 (SAM) 修改在单个设备通道内创建多个VTH值的潜力.

主要方法:

  • 在单个p型有机半导体上利用了双平面自组装单层 (SAM) 修改.
  • 研究了SAMs对单层-有机半导体接口的局部表面电位过渡的影响.
  • 优化了三元逆变器配置的SAM组合和通道宽度比.

主要成果:

  • 成功实现了使用单个p型OSC和coplanar SAMs的多门电压 (多VTH) 晶体管.
  • 证明了由于局部诱导的表面电位过渡,在单个活性通道内形成多个VTH值.
  • 在三元逆变器中通过优化SAM和通道宽度比实现了平衡的中间逻辑状态.

结论:

  • 副平面SAM修改提供了一个可行的策略,以实现稳定可靠的MVL晶体管与单一的p型OSC.
  • 这种方法绕过了异质连接固有的复杂对齐问题,使其适合可扩展的设备制造.
  • 开发的技术为后摩尔时代的信息处理密度增强提供了一条途径.