Cr3+-激活的Mg4GaSbO8 Orthorhombic脊柱衍生与多站点占用可调节的宽带近红外辐射

Qinan Mao1, Xiaoqian Zhang1, Zaixi Yin1

  • 1Center of Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, People's Republic of China.

Inorganic chemistry
|March 11, 2026
PubMed
概括

我们开发了一种新的添加材料,Mg4GaSbO8 (MGSO),用于近红外 (NIR) 发光二极管 (LED). 这种新具有可调节的超宽带NIR发射,对于先进的光学应用至关重要.