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Updated: Mar 13, 2026

Metal-silicate Partitioning at High Pressure and Temperature: Experimental Methods and a Protocol to Suppress Highly Siderophile Element Inclusions
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Published on: June 13, 2015

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转变稳定的Au4Si在其深度温带点附近的分子sp3类反应性使得低温SiC形成成为可能

Jhong-Ren Huang1, Yi-Hsin Liu2, Satoshi Kameoka3

  • 1Department of Mechanic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Da'an Dist., Taipei City 106335, Taiwan.

The journal of physical chemistry letters
|March 11, 2026
PubMed
概括

变态稳定的金- (Au-Si) 结合配置在eutectic点附近表现出类似分子的反应性. 这使得低温碳化 (SiC) 的形成成为可能,挑战了传统的反应机制.

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