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基于AlGaN/GaN异质连接膜的高性能柔性紫外光电晶体管

Ramit Kumar Mondal¹, Zhongshu Xiong¹, Zhiying Chen¹

¹School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.

ACS applied materials & interfaces

|March 12, 2026

概括

研究人员使用化/化 (AlGaN/GaN) 膜开发了一种灵活的紫外线光探测器. 这种灵活的光高电子移动性晶体管 (photo-HEMT) 显示出高性能,为可穿戴光电子设备铺平了道路.

科学领域:

材料科学材料科学材料科学
光电学是指光电子产品.
半导体设备半导体设备

背景情况:

化/化 (AlGaN/GaN) 高电子流动性晶体管 (HEMT) 适用于紫外线光探测器.
现有的AlGaN/GaN HEMT光探测器是刚性的,限制了灵活和可穿戴的应用.

研究的目的:

开发一种灵活的基于AlGaN/GaN HEMT的紫外线光探测器.
为了实现灵活和可穿戴的光电子产品的新应用.

主要方法:

通过从AlGaN/GaN-on绝缘体中释放AlGaN/GaN膜,制造出一个灵活的光高电子流动性晶体管 (光HEMT).
将AlGaN/GaN膜转移到一个柔性基板上.

主要成果:

取得了卓越的光电子性能,探测能力为2.7 × 10 16 斯在360nm波长.
灵活的光HEMT性能优于之前报告的三端灵活光电晶体管.
通过应变诱导的压力相效应 (piezo-photonic effect) 证明了性能提升的潜力.

结论:

灵活的AlGaN/GaN光HEMT的开发是灵活光晶体管的重大进展.
与现有的化 (GaN) 技术的兼容性促进了灵活光电子的商业化.

关键词:

它们是AlGaN/GaNN.紫外线紫外线紫外线灵活的光电探测器在照片-HEMTT.二维电子气体 (2DEG) 是一个二维的电子气体.

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P-N junction

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