在二维 (Cu,Ag) InP2S6中进行内在非线性调制,用于无选择器非挥发性存储阵列
Sai Prakash Maddineni1, Yujian Huang1, Kausar Khawaja2
1School of Electrical Computing and Energy Engineering (ECEE), Arizona State University, Tempe, Arizona 85287, United States.
ACS applied materials & interfaces
|March 12, 2026
概括
一种新材料,Cu$_{0.5}$Ag$_{0.5}$InP$_{2}$S$_{6}$ (CAIPS),有效地抑制了无选择器电阻随机访问内存中的潜入路径电流. 这一突破使得可扩展的,高密度的内存阵列能够用于先进的计算应用.
科学领域:
- 材料科学 材料科学 材料科学
- 固态电子 固态电子
- 纳米技术 纳米技术
背景情况:
- 无选择器电阻式随机访问存储器 (RRAM) 对高密度交叉条数组至关重要.
- 在没有外部选择器的情况下抑制隐形路径电流 (SPC) 是一个重大挑战.
研究的目的:
- 为了研究Cu$_{0.5}$Ag$_{0.5}$InP$_{2}$S$_{6}$ (CAIPS) 作为无选择器RRAM的切换层.
- 为了比较CAIPS与CuInP$_{2}$S$_{6}$ (CIPS) 和AgInP$_{2}$S$_{6}$ (AIPS) 的电阻切换特性.
主要方法:
- 基于CAIPS,CIPS和AIPS的设备的制造和表征.
- 第一原则密度函数理论 (DFT) 计算以了解扩散障碍.
- 系统地比较电阻开关性能,包括非线性和内存窗口.
主要成果:
- 由于不对称的离子扩散,CAIPS表现出自我纠正的传输和内在的SPC抑制.
- CAIPS设备显示稳定的双极切换,高非线性 (>10),大内存窗口 (>9x) 和低可变性 (CV=5.1%).
- CAIPS的业绩超过了CIPS和AIPS.
结论:
- CAIPS是可扩展的无选择器内存阵列的一个有希望的材料.
- 它的内置非线性和出色的切换特性与神经形态和边缘计算相关.
- CAIPS提供了一条通往节能,高密度内存解决方案的途径.
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