扭曲的原子磁道连接点具有多个非挥发性状态.
Yuliang Chen1, Kartik Samanta2,3, Alexander J Healey4
1Max Planck Institute of Microstructure Physics, Halle, Germany.
Nature communications
|March 13, 2026
概括
研究人员使用(IV) 硫化化 (CrSBr) 开发了新的2D扭曲磁道连接 (MTJ). 这些原子极限装置使多态非挥发性磁性信息存储成为可能,从而推进了自旋电子技术.
科学领域:
- 这就是Spintronics.
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
背景情况:
- 磁道连接 (MTJs) 是关键的自旋电子设备.
- 二维 (2D) 磁铁,特别是反铁磁 (AFM) 材料,正在为MTJ开发提供新的可能性.
- 扭曲的2D材料提供独特的电子和磁性特性.
研究的目的:
- 为了展示能够存储多个不同的非挥发性状态的2D扭曲MTJ.
- 探索整合多个扭曲接口以提高数据存储容量的潜力.
- 为了研究铁磁/反铁磁和全反铁磁扭曲的MTJ结构.
主要方法:
- 使用扭曲的铁磁和反铁磁CRSBr单层和双层制造不对称的MTJ.
- 在低温下的零磁场中,道磁阻 (TMR) 的表征.
- 通过堆叠额外的扭曲层来设计多界面MTJ.
- 使用多个扭曲的CrSBr双层演示全抗铁磁MTJ.
主要成果:
- 不对称扭曲的MTJ表现出两个不同的非挥发性状态,在2K时高达700%的TMR.
- 带有第二个扭曲接口的MTJ显示了四个非挥发性状态,可以使用磁场在任何状态之间切换.
- 具有三个扭曲双层的全抗铁磁MTJ显示了多个非挥发性状态.
- 在原子极限证明了多状态信息存储的可行性.
结论:
- 扭曲的2D磁铁为MTJ中的多态非挥发性磁性信息存储提供了一条途径.
- 集成多个扭曲接口可以增加原子尺度设备中的存储密度.
- 这种方法将非易失性内存的边界推向原子极限,为未来的数据存储技术提供了巨大的潜力.
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