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Updated: Mar 14, 2026

Improved Heterojunction Quality in Cu2O-based Solar Cells Through the Optimization of Atmospheric Pressure Spatial Atomic Layer Deposited Zn1-xMgxO
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Improved Heterojunction Quality in Cu2O-based Solar Cells Through the Optimization of Atmospheric Pressure Spatial Atomic Layer Deposited Zn1-xMgxO

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为先进的电子应用开发基于CuO-ZnO的整形连接.

Maruthi Mala1, Rajib Mahato1, Anagh Bhaumik1

  • 1Materials Engineering Department, Indian Institute of Technology, Gandhinagar, Palaj, Gujarat, 382355, India. anagh.bhaumik@iitgn.ac.in.

Physical chemistry chemical physics : PCCP
|March 13, 2026
PubMed
概括

乙烯糖醇辅助合成产生CuO和ZnO纳米结构,以改善p-n整形连接. 这种缺陷和表面工程策略增强了电荷传输,并为先进的电子设备提供了可扩展的路线.

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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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