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Updated: Mar 14, 2026

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
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3级垂直堆叠Si纳米板GAApFETs与低温接口处理用于冷应用

Lewen Qian1, Tao Liu1, Meicheng Liao1

  • 1State Key Laboratory of Integrated Chips and Systems, School of Microelectronics, Fudan University, Shanghai 200433, China.

Nanomaterials (Basel, Switzerland)
|March 13, 2026
PubMed
概括

这项研究引入了一种新型的冷性CMOS纳米板晶体管,使用O基被动化来克服下值摆动和. 这一创新能够显著减少泄漏电流,并提高低温节能计算的性能.

关键词:
这是一个极端的激进分子.低温的冷却物质是什么全方位的门户 (GAA)接口被动化 接口被动化切换的切换 切换的切换

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