概括
研究人员开发了一种新型的宽带红外探测器在在绝缘体 (SOI) 基板上使用兴奋剂. 这一进步显著提高了量子效率,为高性能红外成像系统铺平了道路.
科学领域:
- 光电学是指光电子产品.
- 半导体材料 半导体材料
背景情况:
- 开发高质量的红外敏感材料并将其与电路集成是具有挑战性的.
- 这种整合对于推进红外探测器技术至关重要.
研究的目的:
- 报告一个直接在在绝缘体 (SOI) 基板上制造的宽带红外探测器.
- 为了提高光学吸收效率和量子效率在一个广泛的红外范围.
主要方法:
- 使用兴奋剂直接在SOI基板上制造红外探测器.
- 实施了一种复杂的摄影捕捉结构设计,以增强光学吸收.
- 在波长范围7-22μm的检测器性能的表征.
主要成果:
- 制造的摄影捕捉SOI:As探测器显示了量子效率的显著改善.
- 观察到外部量子效率 (EQE) 的平均提升为346%,内部量子效率 (IQE) 的平均提升为696%.
- 峰值EQE达到20%,峰值IQE达到40%,吸收区域很薄 (~100nm).
结论:
- 开发的CMOS兼容的混合架构为高性能,大规模的单体红外探测器阵列提供了有前途的途径.
- 兴奋剂和摄影捕捉结构有效地克服了红外探测器开发的先前局限性.
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