不相称的磁力驱动在磁性韦尔半金属CeAlGeGe中的单角角磁电阻
1Boston College, Department of Physics, Chestnut Hill, Massachusetts 02467, USA.
Physical review letters
|March 13, 2026
概括
韦尔半金属CeAlGe中的多k磁状态会产生单一的角磁阻 (SAMR),精确地检测磁场方向. 这种现象出现在CeAlSi中,具有Ge替代,将带拓,传输和磁性联系起来.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 量子材料 量子材料是一种量子材料.
背景情况:
- 韦尔半金属是具有独特电子性质的拓材料.
- 半金属中的磁性排序可以影响它们的拓特性.
- 了解磁力和电子结构之间的相互作用对于新的量子现象至关重要.
研究的目的:
- 在韦尔半金属CeAlGe.Ge中调查奇点角磁阻 (SAMR) 的出现.
- 探索CeAlSi$_{1-x}$Ge$_{x}$合金中的磁态和电子结构之间的关系.
- 为了建立带拓,传输特性和磁性之间的联系.
主要方法:
- 电传输测量,特别是角磁阻测量.
- 对CeAlSi$_{1-x}$Ge$_{x}$合金的合成和表征.
- 电子结构和磁相互作用的分析.
主要成果:
- CeAlGe表现出多k不相称的磁性状态,导致SAMR.
- CeAlSi既缺乏多k顺序,也缺乏SAMR.
- 在CeAlSi$_{1-x}$Ge$_{x}$中,SAMR和多k顺序以57%的Ge替换出现.
- 这些变化与平面内异构性减弱和增强的韦尔介导磁相互作用相关.
结论:
- 韦尔半金属中的多k磁性状态与SAMR的发生直接相关.
- 电子结构和磁相互作用的替代驱动的修改是观察SAMR的关键.
- 这项研究突出了在韦尔半金属中带拓,电子传输和集体磁力之间显著的相互作用.
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