Characteristics of MOSFET
MOSFET: Enhancement Mode
MOSFET
Biasing of Metal-Semiconductor Junctions
MOS Capacitor
MOSFET Amplifiers
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Xiaofu Wei1,2, Zhangyi Chen1,2, Kuanglei Chen1,2
1Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, PR China.
这项研究引入了一种新的通用逻辑块 (GLB),用于用于先进集成电路的偏差门式场效应晶体管 (BG-FET). 这些BG-FET能够实现可重新配置的逻辑操作,使用的晶体管比传统的CMOS技术少得多.
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