在超薄晶体管中揭示和工程接触源噪声
Hae-Won Lee1, Minjae Kim2, Junho Ban3
1Department of Electrical Engineering, Pohang University of Science and Technology Cheongam-ro 77, Nam-gu Pohang Gyeongbuk 37673 Republic of Korea bhlee1@postech.ac.kr.
Nanoscale advances
|March 16, 2026
概括
超薄 (Te) 晶体管因接触陷而遭受低频噪声. 通过使用更厚的Te层设计接触接口,可以显著减少这种噪音,从而实现可靠,低噪音的电子产品.
科学领域:
- 半导体物理 半导体物理
- 材料科学是一种材料科学.
- 纳米电子学纳米电子学
背景情况:
- (Te) 是一个有前途的p型半导体用于超薄电子产品,由于其稳定性和传输性能.
- 超薄的Te场效应晶体管 (FET) 中的接触接口上的陷会引起显著的低频噪声,阻碍性能.
研究的目的:
- 调查超薄Te FETs中的噪声来源.
- 分析接触接口陷对设备性能的影响.
- 制定策略,以减轻基于Te的电子产品中的噪音.
主要方法:
- 具有不同通道厚度 (5nm和13nm) 的Te FETs偏差和温度依赖的1/f噪声分析.
- 调查载体数波动 (CNF) 模型偏差和陷辅助道挖掘.
- 实施和测试以接触为中心的工程方法,使用局部加厚的Te层.
主要成果:
- 接触源陷辅助道设计在300 K的5 nm Te装置中占据主导地位,与CNF模型有所不同.
- 冷却到100K或使用13纳米设备恢复了由于抑制陷激活或选而导致的CNF行为.
- 局部加厚的Te接触设计减少了噪声的数量级,并将排水偏差的依赖性降低了两倍.
结论:
- 接近接触陷是超薄Te FETs中噪声的主要来源.
- 以接触为中心的工程是一种有效的策略,可以减少噪音,并实现可扩展,低噪音的电子设备.
- 这种方法将设备扩展与噪音问题分开,为可靠的基于Te的设备铺平了道路.
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