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Updated: Aug 11, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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Published on: November 1, 2013

在用光学的NMR探测到的化量子井中的电子状态

R Tycko1, S E Barrett, G Dabbagh

  • 1AT&T Bell Laboratories, Murray Hill, NJ 07974, USA.

Science (New York, N.Y.)
|June 9, 1995
PubMed
概括

光学增强了GaAs量子井中的核磁共振 (NMR) 信号,揭示了电子与电子的相互作用. 在特定的填充因子下,放松率的最小值表明量子霍尔状态中的能量差距.

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