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Updated: Aug 6, 2026

Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition
09:45

Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition

Published on: July 26, 2016

铁电场效应晶体管基于长轴矿异构结构的铁电场效应晶体管

Mathews1, Ramesh, Venkatesan

  • 1S. Mathews, Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742, USA. R. Ramesh, Department of Materials and Nuclear Engineering and Center for Superconductivity Research, University of Maryland, College Park, MD 20742, USA. T. Venkatesan, Center for Superconductivity Research, University of Maryland, College Park, MD 20742, USA. J. Benedetto, Army Research Laboratory, Adelphi, MD 20783-1197, USA.

Science (New York, N.Y.)
|April 11, 1997
PubMed
概括

使用合稀土酸盐的铁电场效应装置显示了对非挥发性内存的可调节半导体特性. 这项研究展示了一种具有显著导电量调制和最小数据损失的设备.

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Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain08:00

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain

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Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...