旋转依赖道装置的磁稳定性 旋转依赖道装置的磁稳定性
1IBM Research Division, Almaden Research Center, 650 Harry Road, K11/D2, San Jose, CA 95120-6099, USA.
概括
在存储器设备中使用的铁磁道连接可以因重复的磁切换而丢失数据. 脱磁通过域壁运动发生,但通过连贯旋转防止,确保数据稳定性.
科学领域:
- 这就是Spintronics.
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
背景情况:
- 铁磁金属层中的道阻力取决于磁化方向.
- 记忆装置利用磁性软层与硬层或交换偏差层的独立切换.
研究的目的:
- 在野外循环过程中调查铁磁道连接处的去磁化机制.
- 确定影响磁道交叉点内存稳定性的因素.
主要方法:
- 对具有交换偏差和磁硬层的磁道交叉点进行比较分析.
- 场循环以诱导软层中的磁化逆转.
- 监测磁化衰变,并确定反转机制.
主要成果:
- 交换偏差结构显示稳定的磁化高达10^7周期.
- 磁硬结构表现出磁化与磁场周期的对数分解.
- 脱磁对硬层厚度和软层组成敏感.
- 当磁化逆转通过连贯旋转发生时,没有观察到衰变.
结论:
- 在磁场循环过程中铁磁道连接处的去磁化归因于域壁的形成和软层的运动.
- 磁化的一致旋转防止了去磁化,确保了内存的稳定性.
- 了解这些机制对于设计强大的磁性存储器设备至关重要.
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