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Room temperature lasing at blue wavelengths in gallium nitride microcavities
1Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan. Lehrstuhl fur Technische Physik, Universitat Wurzburg, Am Hubland, 97074 Wurzburg, Germany. Consiglio Nazionale delle.
Science (New York, N.Y.)
|September 18, 1999
Summary
Researchers demonstrated blue lasing in vertical cavity surface-emitting lasers at room temperature. This breakthrough in gallium-nitride materials paves the way for practical blue laser applications.
Area of Science:
- Optoelectronics
- Materials Science
- Semiconductor Physics
Background:
- Vertical cavity surface-emitting lasers (VCSELs) are crucial for optoelectronic devices.
- Achieving efficient blue lasing in VCSELs remains a significant challenge.
- Gallium-nitride-based materials offer potential for blue light emission.
Purpose of the Study:
- To demonstrate room-temperature lasing action at blue wavelengths in VCSELs.
- To investigate the performance of indium gallium nitride multiple quantum wells in a microcavity.
- To assess the feasibility of gallium-nitride-based materials for practical blue VCSELs.
Main Methods:
- Fabrication of a microcavity using indium gallium nitride multiple quantum wells.
- Incorporation of nitride-based and oxide-based quarter-wave reflectors.
- Optical excitation and spectral analysis to confirm lasing action.
Main Results:
- Successful demonstration of lasing at a blue wavelength of 399 nanometers.
- Observed significant linewidth narrowing from 0.8 nm below threshold to <0.1 nm above threshold.
- Room-temperature operation confirmed.
Conclusions:
- The study successfully demonstrated blue lasing in VCSELs at room temperature.
- The results indicate the potential of gallium-nitride-based materials for practical blue VCSELs.
- This work advances the development of efficient blue light-emitting semiconductor devices.
