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On the grain boundary segregation of Sn in indium-tin-oxide thin films
1Department of Materials Science and Engineering, Nagoya Institute of Technology, Japan. morikawa@mse.nitech.ac.jp
Abstract:
The determination of Sn segregation by means of electron energy loss spectroscopy and X-ray photoelectron spectroscopy has been attempted on indium-tin-oxide thin films prepared by various processes: (a) as-deposited at room temperature; (b) after annealing at 533 K in vacuum; (c) after annealing in air; and (d) as-deposited at 473 K. The occurrence of Sn segregation both at the surface and at the grain boundary was proved. The degree of segregation detected, varied depending on the preparation process of the films.
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