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Related Experiment Videos

Multiport-readout frame-transfer 5 megapixel CCD imaging system for TEM applications.

G Y Fan1, S Peltier, S Lamont

  • 1National Center for Microscopy and Imaging Research, Department of Neurosciences, School of Medicine, University of California, San Diego, La Jolla 92093-0608, USA. gfan@ucsd.edu

Ultramicroscopy
|July 15, 2000
PubMed
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A new digital imaging system using a charge-coupled device (CCD) was developed for intermediate-high-voltage electron microscopy (IVEM). This system enables rapid image acquisition up to 400 keV, improving IVEM applications.

Area of Science:

  • Electron Microscopy
  • Digital Imaging Technology
  • Solid-State Physics

Background:

  • Intermediate-high-voltage electron microscopy (IVEM) requires advanced digital imaging systems for high-resolution analysis.
  • Existing systems may have limitations in readout speed and sensitivity at higher electron energies.

Purpose of the Study:

  • To develop and test a novel multiport-readout, frame-transfer charge-coupled device (CCD) digital imaging system for IVEM applications up to 400 keV.
  • To evaluate the system's performance characteristics, including readout speed, sensitivity, and spatial resolution.

Main Methods:

  • Development of a digital imaging system utilizing a back-thinned CCD with 2560 x 1960 pixels (24 µm x 24 µm pixel size).
  • Implementation of a multiport readout architecture using four of eight on-chip ports in parallel, operating at 1- or 2-MHz pixel rates.

Related Experiment Videos

  • Utilized frame-transfer readout as an electronic shutter for simultaneous integration and readout.
  • Incorporated a thin film-based phosphor screen and lens relay for electron-to-digital signal conversion.

    • Main Results:

    • Achieved a full CCD array readout time as short as 0.6 seconds.
    • Demonstrated a conversion factor of 2.1 digital units per incident electron at 400 keV.
    • Measured a modulation transfer function (MTF) of 14% at the Nyquist frequency, indicating good spatial resolution.

    Conclusions:

    • The developed multiport-readout, frame-transfer CCD system is suitable for IVEM applications up to 400 keV.
    • The system offers rapid image acquisition and good performance characteristics for high-voltage electron microscopy.
    • This technology advances digital imaging capabilities in high-energy electron microscopy.