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Updated: Aug 4, 2026

Writing and Low-Temperature Characterization of Oxide Nanostructures
Published on: July 18, 2014
Metal-insulator oscillations in a two-dimensional electron-hole system
1Department of Physics, Oxford University, Clarendon Laboratory, Parks Road, Oxford OX1 3PU, United Kingdom.
Abstract:
The electrical transport properties of a bipolar InAs/GaSb system have been studied in a magnetic field. The resistivity oscillates between insulating and metallic behavior while the quantum Hall effect shows a digital character oscillating from 0 to 1 conductance quantum e(2)/h. The insulating behavior is attributed to the formation of a total energy gap in the system. A novel looped edge state picture is proposed associated with the appearance of a voltage between Hall probes which is symmetric on magnetic field reversal.
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