Related Experiment Video
Updated: Sep 18, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Dual-ferroelectric stacked high-performance field-effect transistor
Peng Wang1,2, Biyi Jiang3, Wuhong Xue4,5
1Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Materials Science and Engineering, Shanxi Normal University, Taiyuan, China.
Abstract:
Ferroelectric transistors have the potential to meet the computing demands of data-intensive applications such as artificial intelligence. However, the existing research lacks functional reconfigurability and multi-task parallel processing capability. Here, we report a dual-ferroelectric stacked transistor that operates through opto-electric dual-mode induced ferroelectric polarization reversal, which features configurable multi-mode functionality encompassing electronic storage, multi-level optical memory, and visual functional emulation. The dual-ferroelectric architecture significantly enhances non-volatile memory performances, demonstrating an ultra-high current on/off ratio, ultra-low dark current and energy consumption, over 8-bit conductance states, multiple analog states and large dynamic range. Furthermore, the simulated artificial visual system enables multi-task parallel processing of static and motion mixed-color information. This work demonstrates that dual-ferroelectric stacked architecture holds potential in parallel processing of multidimensional information.
More Related Videos
08:00Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain
Published on: March 27, 2018
10:40A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Related Concept Videos
Field Effect Transistor
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...
MOSFET
In an n-MOSFET, the structure includes n-type source and drain...
MOSFET: Depletion Mode
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity arises...
The Electrical Double Layer