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Two-Channel Anomalous Hall Effect in Epitaxial MnBi2Te4/Mn-Doped Bi2Te3 Heterostructure
Chenyu Bai1,2, Zhaoqing Wang2, Ke Zhu1,2
1Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences , Beijing100190, PR China.
Nano Letters
|August 12, 2026
Summary
We observed a two-channel anomalous Hall effect (AHE) in a novel MnBi2Te4/Mn-doped Bi2Te3 heterostructure. This finding opens new avenues for exploring quantum phenomena in van der Waals heterostructures.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Phenomena
Background:
- MnBi2Te4 exhibits intrinsic magnetism and nontrivial band topology.
- Van der Waals (vdW) heterostructures allow tunable magnetic and topological properties.
Purpose of the Study:
- To investigate the anomalous Hall effect (AHE) in an epitaxial MnBi2Te4/Mn-doped Bi2Te3 vdW heterostructure.
- To explore the underlying mechanisms of unconventional Hall response.
Main Methods:
- Fabrication of epitaxial MnBi2Te4/Mn-doped Bi2Te3 vdW heterostructures.
- Temperature- and angle-dependent Hall measurements.
- Analysis of magnetic critical behaviors and phase transitions.
Main Results:
- Observation of a two-channel AHE with unconventional nonsquare Hall hysteresis loops.
- Distinct magnetic critical behaviors in antiferromagnetic MnBi2Te4 and ferromagnetic Mn-doped Bi2Te3 layers.
- Identification of magnetic phase transitions under rotating magnetic fields.
Conclusions:
- The engineered vdW heterostructure serves as a versatile platform for multichannel AHE.
- Provides new opportunities for exploring intertwined magnetic and topological phenomena.
