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Spin diffusion in semiconductors

Flatte1, Byers

  • 1Department of Physics and Astronomy, University of Iowa, Iowa City, Iowa 52242, USA.

Physical Review Letters
|September 16, 2000
PubMed
Summary

Spin diffusion in doped semiconductors differs significantly from intrinsic ones. Single-band spin packets in n-doped semiconductors exhibit enhanced diffusion, explaining recent observations in GaAs.

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Area of Science:

  • Solid State Physics
  • Semiconductor Physics
  • Spintronics

Background:

  • Spin diffusion in intrinsic semiconductors requires multi-band disturbances involving both electrons and holes.
  • Understanding spin transport in doped semiconductors is crucial for spintronic applications.

Purpose of the Study:

  • To investigate the distinct behavior of spin diffusion in doped semiconductors compared to intrinsic ones.
  • To explain the anomalously large spin diffusion observed in n-doped GaAs.

Main Methods:

  • Theoretical analysis of spin packet behavior in doped semiconductor systems.
  • Modeling of single-band and multi-band spin disturbances.
  • Comparison of diffusion rates for different doping types and spin polarizations.

Main Results:

  • In doped semiconductors, single-band spin packet disturbances are possible, unlike in intrinsic semiconductors.
  • Enhanced spin diffusion is observed in n-doped nonmagnetic semiconductors due to a degenerate electron sea.
  • Spin packet motion is predicted to be an order of magnitude faster for antiparallel than parallel polarized spins in n-doped ferromagnetic/semimagnetic semiconductors, with reversed behavior in p-doped semiconductors.

Conclusions:

  • The distinct spin diffusion mechanisms in doped semiconductors, particularly single-band disturbances, explain observed phenomena like enhanced diffusion in n-doped GaAs.
  • Doping type and carrier spin polarization significantly influence spin diffusion dynamics, offering pathways for spintronic device optimization.

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