Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Videos

Chemical bonding and fermi level pinning at metal-semiconductor interfaces.

R T Tung1

  • 1Bell Labs, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974, USA.

Physical Review Letters
|September 16, 2000
PubMed
Summary
This summary is machine-generated.

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Safety of implantation of a cardioverter-defibrillator without general anesthesia in an electrophysiology laboratory.

The American journal of cardiology·1995
Same author

Implantation of transvenous implantable cardioverter-defibrillator by electrophysiologists: one-year experience.

Kansas medicine : the journal of the Kansas Medical Society·1995
Same author

Long-term survival after permanent pacemaker implantation for sick sinus syndrome.

The American journal of cardiology·1994
Same author

Idiopathic ventricular fibrillation in out-of-hospital cardiac arrest survivors.

Pacing and clinical electrophysiology : PACE·1994
Same author

Nucleotide regulation of ATP sensitive potassium channels.

Cardiovascular research·1994
Same author

G proteins activate ATP-sensitive K+ channels by antagonizing ATP-dependent gating.

Neuron·1994
Same journal

Erratum: Bacterial Turbulence at Compressible Fluid Interfaces [Phys. Rev. Lett. 136, 138301 (2026)].

Physical review letters·2026
Same journal

Unveiling Light-Quark Yukawa Flavor Structure via Dihadron Fragmentation at Lepton Colliders.

Physical review letters·2026
Same journal

Adaptable Route to Fast Coherent State Transport via Bang-Bang-Bang Protocols.

Physical review letters·2026
Same journal

Topological Transition and Emergence of Elasticity of Dislocation in Skyrmion Lattice: Beyond Kittel's Magnetic-Polar Analogy.

Physical review letters·2026
Same journal

Pound-Drever-Hall Method for Superconducting-Qubit Readout.

Physical review letters·2026
Same journal

Coupling a ^{73}Ge Nuclear Spin to an Electrostatically Defined Quantum Dot in Silicon.

Physical review letters·2026
See all related articles

Polarized chemical bonds, not just interface states, can cause Fermi level pinning at metal-semiconductor interfaces. This finding offers a new perspective on Schottky barrier height mechanisms in semiconductor devices.

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Surface Science

Background:

  • Traditional theories attribute Fermi level pinning to interface gap states.
  • Understanding Fermi level pinning is crucial for semiconductor device performance.

Purpose of the Study:

  • To investigate the role of polarized chemical bonds in Fermi level pinning.
  • To challenge the conventional explanation based solely on interface gap states.

Main Methods:

  • Theoretical analysis of metal-semiconductor interfaces.
  • Comparison with experimental data on Schottky barrier heights.

Main Results:

  • Polarized chemical bonds at interfaces can mimic Fermi level pinning.

Related Experiment Videos

  • The proposed mechanism aligns well with experimental observations for polycrystalline materials.

    • Conclusions:

    • Chemical bonding is a significant factor in Schottky barrier height.
    • Revises the fundamental understanding of Fermi level pinning at interfaces.