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Electron localization in a disordered insulating host

Storchak1, Eshchenko, Brewer

  • 1Russian Research Centre "Kurchatov Institute," Kurchatov Square 46, Moscow 123182, Russia.

Physical Review Letters
|September 16, 2000
PubMed
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In solid nitrogen-argon mixtures, excess electrons become localized in a quadrupolar glass phase due to argon

Area of Science:

  • Solid-state physics
  • Materials science

Background:

  • Solid nitrogen exhibits distinct low-temperature phases with varying molecular ordering.
  • Electron transport properties are sensitive to the structural and orientational order of the host material.

Purpose of the Study:

  • Investigate excess electron transport in solid N2-Ar mixtures.
  • Determine the influence of argon concentration on electron localization.
  • Characterize the low-temperature phases of N2-Ar mixtures.

Main Methods:

  • Muon spin rotation spectroscopy was employed.
  • Experiments were conducted in magnetic and electric fields.
  • Measurements were performed on solid N2-Ar mixtures at temperatures ranging from 5 to 60 K.

Main Results:

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  • A quadrupolar glass phase was identified in N2-Ar mixtures with sufficient argon concentration.
  • Excess electrons were found to be strongly localized within this quadrupolar glass phase.
  • Electron delocalization was observed in the alpha phase of pure solid nitrogen, characterized by long-range orientational order.

Conclusions:

  • Argon-induced orientational frustration leads to the formation of a quadrupolar glass phase in solid nitrogen.
  • This quadrupolar glass phase significantly impacts electron transport, causing strong localization.
  • The findings highlight the role of structural disorder in controlling electronic properties of solid molecular systems.