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Updated: Aug 4, 2026

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
Published on: July 17, 2015
Strain-mediated phase coexistence in heteroepitaxial films
1Paul-Drude-Institut fur Festkorperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany.
Abstract:
We present experimental evidence of the equilibrium coexistence between crystalline phases in heteroepitaxial films of MnAs on GaAs. The phases, which can coexist in the bulk system only at one temperature point, coexist in the epitaxial film over a wide temperature interval. An apparent contradiction with the Gibbs phase rule is resolved by the presence of strain in the film.
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