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Characterization of Nanocrystal Size Distribution using Raman Spectroscopy with a Multi-particle Phonon Confinement Model
Published on: August 22, 2015
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Ordering and self-organization in nanocrystalline silicon
1Department of Electrical and Computer Engineering, University of Rochester, New York 14618, USA.
Nature
|October 3, 2000
Summary
Researchers developed a method for self-organizing silicon nanocrystals within silicon dioxide. This technique controls crystal shape and orientation, crucial for advanced microelectronics and quantum dot applications.
Area of Science:
- Materials Science
- Nanotechnology
- Solid-State Physics
Background:
- Spontaneous formation of organized nanocrystals occurs in semiconductors.
- Fabricating size-controlled silicon nanocrystals (Si NCs) within silicon dioxide (SiO2) is vital for microelectronics.
- Previous methods lacked control over Si NC shape and crystallographic orientation.
Purpose of the Study:
- To achieve self-organization of Si NCs with controlled size, shape, and crystallographic orientation.
- To overcome challenges posed by amorphous SiO2 and differing thermal expansion coefficients.
- To enable reproducible fabrication of Si NCs for microelectronic applications.
Main Methods:
- Solid-phase crystallization of nanometer-thick amorphous silicon layers confined between SiO2 layers.
- Utilizing the inherent properties of amorphous silicon and SiO2 interfaces.
- Characterization of nanocrystal formation, shape, and orientation.
Main Results:
- Self-organization of Si NCs larger than 80 Angstroms into brick-shaped crystallites.
- Crystallites oriented along the (111) crystallographic direction.
- Narrow photoluminescence observed due to controlled shape and orientation, contrasting with broad emission from isotropic particles.
Conclusions:
- The study demonstrates a maskless, reproducible technique for fabricating oriented Si NCs.
- Controlled crystallite shape and orientation enhance photoluminescence properties.
- Findings support the development of advanced Si nanofabrication techniques for microelectronics and quantum dot devices.
