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Updated: Aug 19, 2026

Soft Lithographic Functionalization and Patterning Oxide-free Silicon and Germanium
Published on: December 16, 2011
Wetting and molecular orientation of 8CB on silicon substrates
1Materials Sciences Division, Lawrence Berkeley National Laboratory, University of California, Berkeley, California 94720, USA.
Abstract:
The wetting properties of 8CB ( 4(')-n-octyl-4-cyanobiphenyl) on silicon wafers have been studied with scanning polarization force microscopy (SPFM). Layer-by-layer spreading of 8CB droplets is observed. With the help of the surface potential mapping capability of SPFM, we found that the molecular dipole of the first monolayer of 8CB is parallel to the surface. A layer of nearly vertical molecular dimers on top of the monolayer has an associated surface potential of 40 mV, which is attributed to a distortion of the dimer. The dimer distortion propagates to the subsequent smectic bilayers, producing an additional 7 mV potential increase in the second layer, 2 mV on the third, and approximately 1 mV on the fourth.

