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Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials

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Nonlinear electric field effects at a continuous mott-hubbard transition

Husmann¹, Brooke, Rosenbaum

¹Clarendon Laboratory, University of Oxford, Oxford OX1 3PU, England.

Physical Review Letters

|October 6, 2000

Summary

Researchers studied conductivity in Ni(S,Se)2 at low temperatures. Pressure tuning revealed a quantum critical point, determining the dynamical critical exponent z, and showing differing spatial and conductivity exponents.

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Area of Science:

Condensed Matter Physics
Materials Science

Background:

Highly correlated transition metal chalcogenides like Ni(S,Se)2 exhibit complex electronic behaviors.
Understanding non-Ohmic conductivity at low temperatures is crucial for characterizing exotic electronic states.

Purpose of the Study:

To investigate the non-Ohmic conductivity of Ni(S,Se)2 at temperatures below 1 Kelvin.
To probe the influence of a quantum critical point on conductivity through pressure tuning.
To determine the dynamical critical exponent (z) and analyze the spatial correlation length exponent (nu) and conductivity exponent (μ).

Main Methods:

Experimental characterization of electrical conductivity in Ni(S,Se)2 at T < 1 K.
Application of hydrostatic pressure to tune the metal-insulator transition at T = 0 K.
Analysis using finite temperature scaling to extract critical exponents.

Main Results:

The non-Ohmic conductivity was successfully characterized at low temperatures.
Pressure tuning provided direct access to the quantum critical point.
The dynamical critical exponent was determined to be z = 2.7(+0.3)(-0.4).
Finite temperature scaling revealed that the spatial correlation length exponent (nu) and the conductivity exponent (μ) are distinct.

Conclusions:

The study provides a detailed characterization of the non-Ohmic conductivity in Ni(S,Se)2.
The findings highlight the significant role of the quantum critical point in this material's electronic properties.
The determined critical exponents offer insights into the universality and scaling behavior near the metal-insulator transition.