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Related Experiment Video

Updated: Jul 9, 2026

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

Intersubband electroluminescence from silicon-based quantum cascade structures.

G Dehlinger¹, L Diehl, U Gennser

¹Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, CH-5232 Villigen, Switzerland. gabriel.dehlinger@psi.ch

Science (New York, N.Y.)

|January 11, 2000

Summary

Researchers observed intersubband electroluminescence in silicon/silicon-germanium quantum cascade structures. This breakthrough could enable active optical components in silicon-based technology, with lifetimes comparable to existing lasers.

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Area of Science:

Semiconductor Physics
Optoelectronics
Materials Science

Background:

Quantum cascade lasers (QCLs) utilize electronic transitions within semiconductor bands.
Integrating active optical components into silicon technology is a significant challenge.
QCLs require narrow linewidths and long upper-state lifetimes for efficient operation.

Purpose of the Study:

To report the observation of intersubband electroluminescence in a p-type silicon/silicon-germanium quantum cascade structure.
To investigate the potential of silicon-based materials for QCL applications.
To assess the performance characteristics, such as linewidth and lifetime, of these novel structures.

Main Methods:

Fabrication of a p-type silicon/silicon-germanium quantum cascade structure.
Measurement of electroluminescence spectra and polarization.
Temperature-dependent characterization up to 180 Kelvin.
Analysis of nonradiative lifetimes based on quantum well design.

Main Results:

Observed intersubband electroluminescence centered at 130 meV with a 22 meV linewidth.
Electroluminescence exhibited expected polarization and was detectable up to 180 K.
Nonradiative lifetimes were strongly dependent on quantum well design.
Achieved nonradiative lifetimes comparable to established GaInAs/AlInAs laser structures.

Conclusions:

Demonstrated the feasibility of intersubband electroluminescence in silicon/silicon-germanium quantum cascade structures.
The observed characteristics suggest potential for silicon-based active optical devices.
Further optimization of quantum well design can yield lifetimes suitable for practical laser applications.