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Isotope-disorder-induced line broadening of phonons in the Raman spectra of SiC

S Rohmfeld1, M Hundhausen, L Ley

  • 1Institut für Technische Physik, Universität Erlangen-Nürnberg, Erwin-Rommel-Strasse 1, D-91058 Erlangen, Germany.

Physical Review Letters
|February 15, 2001
PubMed

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