Related Experiment Video
Updated: Jul 14, 2026

The Preparation of Electrohydrodynamic Bridges from Polar Dielectric Liquids
Published on: September 30, 2014
Rapid electron tunneling through oligophenylenevinylene bridges.
H D Sikes1, J F Smalley, S P Dudek
1Department of Chemistry, Stanford University, Stanford, CA 94305-5080, USA., Brookhaven National Laboratory, Upton, NY 11973, USA.
Electron transfer through oligophenylenevinylene bridges is not limited by electronic coupling up to 28 angstroms. This suggests these bridges are suitable for molecular electronics due to rapid electron tunneling.
Area of Science:
- Physical Chemistry
- Materials Science
- Molecular Electronics
Background:
- Interfacial electron transfer is crucial for molecular electronics.
- Understanding charge transport through molecular bridges is essential for device development.
- Oligophenylenevinylene (OPV) molecules offer potential as conductive bridges.
Purpose of the Study:
- To measure electron transfer rate constants through OPV bridges.
- To investigate the distance dependence of electron transfer.
- To determine the mechanism of charge transport in OPV bridges.
Main Methods:
- Utilized the indirect laser-induced temperature jump technique.
- Measured rate constants for thermal, interfacial electron transfer.
- Employed a gold electrode and a tethered redox species in an aqueous electrolyte.
Main Results:
- Electron transfer rate constants were measured for OPV bridges up to 28 angstroms.
- Rate constants were not limited by electronic coupling for bridges up to 28 angstroms.
- Electron tunneling occurred in less than 20 picoseconds.
Conclusions:
- Electron transfer through OPV bridges up to 28 angstroms is limited by structural reorganization, not electronic coupling.
- Hopping through the bridge was ruled out based on energy level analysis.
- OPV bridges show promise for wiring molecular electronic elements due to efficient electron tunneling.
More Related Videos
08:43Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
09:03Barrier Functional Integrity Recording on bEnd.3 Vascular Endothelial Cells via Transendothelial Electrical Resistance Detection
Published on: September 29, 2023
Related Concept Videos
Drift Velocity
Cable Subjected to a Distributed Load
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Bridge rectifier
Operationally, the bridge rectifier allows current flow through two of its diodes during each...
Schottky Barrier Diode
The Electrical Double Layer