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Related Experiment Videos

Near-field optics on silicon-electrolyte junctions.

H Diesinger1, A Bsiesy, R Hérino

  • 1Laboratoire de Spectrométrie Physique, CNRS (UMR 5588), Université Joseph Fourier (Grenoble 1), BP 87, 38402 Saint Martin d'Hères Cedex, France.

Journal of Microscopy
|April 12, 2001
PubMed
Summary

This study presents a near-field photocurrent mapping technique for silicon surfaces. The method achieves 100-nm resolution, limited by the optical fiber aperture size.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Surface Science

Background:

  • Near-field microscopy techniques are crucial for high-resolution surface analysis.
  • Photocurrent (PC) mapping offers insights into semiconductor electronic properties.
  • Characterizing silicon surfaces in electrolyte environments presents unique challenges.

Purpose of the Study:

  • To develop and demonstrate a near-field photocurrent mapping technique for silicon surfaces in contact with electrolytes.
  • To investigate the resolution limits of this technique.
  • To analyze the influence of tip-topography interactions on PC contrast.

Main Methods:

  • Utilized an optical fiber tip with a 100-nm aperture as the illumination source.
  • Employed a shear force detection system for precise tip-sample distance control during scanning.

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  • Performed PC mapping on SiO2/Si mesas and topography-less porous-silicon/silicon samples.

    • Main Results:

    • Achieved a spatial resolution of 300 nm on SiO2/Si mesas, limited by tip-topography interactions.
    • Demonstrated that PC contrast can be influenced by the tip-topography interaction.
    • Attained a lateral resolution of approximately 100 nm on topography-less samples, limited by the aperture size.

    Conclusions:

    • The developed near-field photocurrent mapping technique is capable of high-resolution imaging of silicon surfaces.
    • The technique's resolution is fundamentally limited by the optical aperture size when topographic features are absent.
    • This method provides a valuable tool for analyzing semiconductor interfaces in electrochemical systems.