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Updated: Jul 27, 2026

Fabrication of Spatially Confined Complex Oxides
Published on: July 1, 2013
Atomic scale oxidation of a complex system: O2/alpha-SiC(0001)-( 3 x 3)
F Amy1, H Enriquez, P Soukiassian
1Commissariat à l'Energie Atomique, DSM-DRECAM-SPCSI-SIMA, Bâtiment 462, Saclay, 91191 Gif sur Yvette Cedex, France.
Abstract:
The atomic scale oxidation of the alpha-SiC(0001)-(3 x 3) surface is investigated by atom-resolved scanning tunneling microscopy, core level synchrotron radiation based photoemission spectroscopy, and infrared absorption spectroscopy. The results reveal that the initial oxidation takes place through the relaxation of lower layers, away from the surface dangling bond, in sharp contrast to silicon oxidation.
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