Atomic scale oxidation of a complex system: O2/alpha-SiC(0001)-( 3 x 3)

F Amy1, H Enriquez, P Soukiassian

  • 1Commissariat à l'Energie Atomique, DSM-DRECAM-SPCSI-SIMA, Bâtiment 462, Saclay, 91191 Gif sur Yvette Cedex, France.

Summary

The atomic scale oxidation of alpha-silicon carbide (SiC) surfaces differs significantly from silicon oxidation. Initial oxidation occurs via lower layer relaxation, not from the surface dangling bond.

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