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Fabrication of Silica Ultra High Quality Factor Microresonators
Published on: July 2, 2012
1/f frequency noise of 2-GHZ high-Q thin-film sapphire resonators
E S Ferre-Pikal1, M C Delgado Arámburo, F L Walls
1University of Wyoming, Laramie, WY 82071-3295, USA. evafp@uwyo.edu
Abstract:
We present experimental results on intrinsic 1/f frequency modulation (FM) noise in high-overtone thin-film sapphire resonators that operate at 2 GHz. The resonators exhibit several high-Q resonant modes approximately 100 kHz apart, which repeat every 13 MHz. A loaded Q of approximately 20,000 was estimated from the phase response. The results show that the FM noise of the resonators varied between Sy (10 Hz) = -202 dB relative (rel) to 1/Hz and -210 dB rel to 1/Hz. The equivalent phase modulation (PM) noise of an oscillator using these resonators (assuming a noiseless amplifier) would range from [symbol: see text](10 Hz) = -39 to -47 dBc/Hz.
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