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Fluorescence intermittency in self-assembled InP quantum dots.

M Sugisaki1, H W Ren, K Nishi

  • 1Single Quantum Dot Project, ERATO, JST, Tsukuba Research Consortium, 5-9-9 Tokodai, Tsukuba, Ibaraki 300-2635, Japan.

Physical Review Letters
|June 1, 2001
PubMed
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Fluorescence intermittency in Indium Phosphide (InP) quantum dots is caused by local electric fields. These fields arise from trapped carriers near matrix defects, leading to blinking behavior in the quantum dots.

Area of Science:

  • Semiconductor Nanostructures
  • Quantum Dot Physics
  • Optoelectronics

Background:

  • Self-assembled Indium Phosphide (InP) quantum dots are promising for optoelectronic applications.
  • Fluorescence intermittency, or blinking, is a common phenomenon in quantum dots that hinders their performance.
  • Understanding the origin of blinking is crucial for developing stable and reliable quantum dot devices.

Purpose of the Study:

  • To investigate the origin of fluorescence intermittency in InP self-assembled dots.
  • To correlate blinking behavior with material properties and external stimuli.
  • To propose a mechanism for fluorescence intermittency in these quantum dots.

Main Methods:

  • Far-field imaging techniques were employed to observe individual quantum dots.

Related Experiment Videos

  • Single-dot spectroscopy was used to analyze the fluorescence properties of isolated dots.
  • Experimental conditions, including laser irradiation and external electric fields, were manipulated to study blinking.

    • Main Results:

    • Blinking quantum dots were frequently observed near surface scratches.
    • Near-infrared laser irradiation significantly increased the blinking frequency.
    • The blinking phenomenon was successfully reproduced by applying an external electric field.
    • A thermal activation-type behavior was observed in the switching rate.

    Conclusions:

    • Fluorescence intermittency in InP quantum dots is attributed to local electric fields.
    • These electric fields are generated by carriers trapped at deep localized centers within the Gallium Indium Phosphide (GaInP) matrix.
    • The presence of defects and external electric fields play a critical role in modulating quantum dot blinking.