Analysis of dark spots growing in organic EL devices by time-of-flight secondary ion mass spectrometry

Chemical structural analysis of tape-stripped surfaces at dark spots growing in organic electroluminescent (EL) devices during exposure to the atmosphere was done by time-of-flight secondary ion mass spectrometry (OF-SIMS). The EL devices consist of indium-tin-oxide, triphenylamine-tetramer, tris(8-hydroxyquinoline)aluminum (Alq3), and a Mg-Ag cathode deposited in order under vacuum on a glass substrate. It was found that the interface between the Alq3 layer and the Mg-Ag cathode was exposed as a result of tape-stripping, where a large number of dark spots were observed on both sides. Secondary ion images of O-, Mg+, and Alq2+ were observed from the dark spots on the cathode side. On the other hand, Mg+ and O- images with a nucleus in the center were observed from the Alq3 side. It is concluded from the results that the constituent element Mg of the cathode was oxidized at the interface adjacent to the Alq3 layer during exposure to the atmosphere, forming a dark spot with a nucleus in the center. Finally, it was confirmed that the TOF-SIMS analysis of the tape-stripped surface is useful for the analysis of the mechanism of dark spot formation.