Dislocation mobility and electronic effects in semiconductor compounds
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Updated: Oct 5, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
G Vanderschaeve1, C Levade, D Caillard
1CEMES/CNRS BP 4347 31055 Toulouse cedex 4, France. vandersc@mail.cemes.fr
Abstract:
In situ transmission electron microscopy experiments provide a unique way to investigate in real time the dislocation behaviour at a microscopic scale and to decide which elementary process controls the dislocation glide in semiconductors. In this review the experimental results obtained on different semiconductors are presented and discussed. Particular attention is devoted to the radiation-enhanced glide process.
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