Related Experiment Video

Updated: Jun 24, 2026

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
09:20

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

Published on: December 7, 2015

Long-distance electron transfer across molecule-nanocrystalline semiconductor interfaces

E Galoppini1, W Guo, P Qu

  • 1Chemistry Department, Rutgers University, Newark, NJ 07102, USA.

Journal of the American Chemical Society
|July 18, 2001
PubMed
Summary

No abstract available in PubMed .

More Related Videos

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Silicon Nanowires and Optical Stimulation for Investigations of Intra- and Intercellular Electrical Coupling08:58

Silicon Nanowires and Optical Stimulation for Investigations of Intra- and Intercellular Electrical Coupling

Published on: January 28, 2021

Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...