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Effects of dissipation on a superconducting single electron transistor
J B Kycia1, J Chen, R Therrien
1Department of Physics, University of California, Berkeley, California 94720, USA.
Physical Review Letters
|July 20, 2001
Summary
Dissipation impacts superconducting single electron transistors (sSETs). Increasing dissipation or lowering temperature enhances the minimum zero-bias conductance (G(min)0) in GaAs/AlGaAs heterostructures.
Area of Science:
- Condensed matter physics
- Quantum electronics
Background:
- Superconducting single electron transistors (sSETs) are crucial for quantum computing and sensitive measurements.
- Dissipation in the environment can significantly alter the electronic properties of quantum devices.
Purpose of the Study:
- To investigate the influence of dissipation on the minimum zero-bias conductance (G(min)0) of an sSET.
- To explore the relationship between dissipation, temperature, and sSET conductance.
Main Methods:
- Fabrication of a superconducting single electron transistor (sSET) coupled to a two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure.
- In situ control of dissipation by tuning the 2DEG density using a back gate voltage.
- Measurement of the minimum zero-bias conductance (G(min)0) as a function of dissipation and temperature.
Main Results:
- The minimum zero-bias conductance (G(min)0) was found to increase with increasing dissipation.
- A reduction in temperature also led to an increase in G(min)0.
- Observed functional dependencies were compared against theoretical models.
Conclusions:
- Dissipation plays a significant role in determining the conductance properties of sSETs.
- The experimental findings are consistent with theoretical predictions involving lossy transmission line models for device leads.