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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Beam characteristics for various sizes of annular aperture on scanning electron microscope

T Ishitani1, M Sato, H Todokoro

  • 1Instruments, Hitachi Ltd., Hitachinaka-shi, Ibaraki-ken, Japan. toru-ishitani@instr.hitachi.co.jp

Ultramicroscopy
|July 21, 2001
PubMed

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