Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Ionic Bonding and Electron Transfer02:48

Ionic Bonding and Electron Transfer

Ions are atoms or molecules bearing an electrical charge. A cation (a positive ion) forms when a neutral atom loses one or more electrons from its valence shell, and an anion (a negative ion) forms when a neutral atom gains one or more electrons in its valence shell. Compounds composed of ions are called ionic compounds (or salts), and their constituent ions are held together by ionic bonds: electrostatic forces of attraction between oppositely charged cations and anions.
Molecular and Ionic Solids02:54

Molecular and Ionic Solids

Crystalline solids are divided into four types: molecular, ionic, metallic, and covalent network based on the type of constituent units and their interparticle interactions.
Molecular Solids
Molecular crystalline solids, such as ice, sucrose (table sugar), and iodine, are solids that are composed of neutral molecules as their constituent units. These molecules are held together by weak intermolecular forces such as London dispersion forces, dipole-dipole interactions, or hydrogen bonds, which...
Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Types of Reversible Electrodes01:24

Types of Reversible Electrodes

For electrode reversibility to be maintained, all the reactants and products involved in the half-reaction must be present at the electrode. There are several types of reversible electrodes (half-cells).In metal-metal-ion electrodes, a metal balances electrochemically with a solution of its own ions. Examples are Cu2+|Cu and Zn2+|Zn. Metals that react with the solvent, like group 1 and most group 2 metals, which react with water, and zinc, which reacts with aqueous acidic solutions, cannot be...
The Electrical Double Layer01:30

The Electrical Double Layer

In the region where two bulk phases meet, an intricate electric charge distribution arises due to charge transfer, ion adsorption, molecular orientation, and charge distortion. This complex distribution is commonly referred to as the electrical double layer.When a solid electrode interfaces with ions in an electrolyte solution, the speed of electron transfer dictates the rates of oxidation and reduction. The electrode acquires a charge through the escape of atoms into the solution as cations or...
Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Picoscale structural insight into superconductivity of monolayer FeSe/SrTiO<sub>3</sub>.

Science advances·2020
Same author

Glassy Phonon Heralds a Strain Glass State in a Shape Memory Alloy.

Physical review letters·2018
Same author

Orbital Engineering in Nickelate Heterostructures Driven by Anisotropic Oxygen Hybridization rather than Orbital Energy Levels.

Physical review letters·2016
Same author

Engineered Unique Elastic Modes at a BaTiO_{3}/(2×1)-Ge(001) Interface.

Physical review letters·2016
Same author

Probing plasmons in three dimensions by combining complementary spectroscopies in a scanning transmission electron microscope.

Nanotechnology·2016
Same author

Local observation of the site occupancy of Mn in a MnFePSi compound.

Physical review letters·2015

Related Experiment Video

Updated: Jun 22, 2026

Protocol of Electrochemical Test and Characterization of Aprotic Li-O2 Battery
08:18

Protocol of Electrochemical Test and Characterization of Aprotic Li-O2 Battery

Published on: July 12, 2016

Physical structure and inversion charge at a semiconductor interface with a crystalline oxide.

R A McKee1, F J Walker, M F Chisholm

  • 1Oak Ridge National Laboratory, Oak Ridge, TN 37831-6118, USA.

Science (New York, N.Y.)
|July 21, 2001
PubMed
Summary

Atomic-level control of crystalline oxides on semiconductors enables precise manipulation of electrical properties. This breakthrough allows for novel, charge-free interfaces in metal oxide semiconductor devices, opening new avenues in solid-state electronics.

More Related Videos

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Magnetometric Characterization of Intermediates in the Solid-State Electrochemistry of Redox-Active Metal-Organic Frameworks
06:53

Magnetometric Characterization of Intermediates in the Solid-State Electrochemistry of Redox-Active Metal-Organic Frameworks

Published on: June 9, 2023

Related Experiment Videos

Last Updated: Jun 22, 2026

Protocol of Electrochemical Test and Characterization of Aprotic Li-O2 Battery
08:18

Protocol of Electrochemical Test and Characterization of Aprotic Li-O2 Battery

Published on: July 12, 2016

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Magnetometric Characterization of Intermediates in the Solid-State Electrochemistry of Redox-Active Metal-Organic Frameworks
06:53

Magnetometric Characterization of Intermediates in the Solid-State Electrochemistry of Redox-Active Metal-Organic Frameworks

Published on: June 9, 2023

Area of Science:

  • Solid-state physics
  • Materials science
  • Semiconductor device physics

Background:

  • Traditional metal oxide semiconductor (MOS) devices face limitations in interface control.
  • Understanding and manipulating the atomic structure of oxide-semiconductor interfaces is crucial for advanced electronics.

Purpose of the Study:

  • To demonstrate atomic-level control over the physical and electrical properties of crystalline oxides on semiconductors.
  • To engineer heterojunction band offsets and alignments for charge-free interfaces.
  • To establish crystalline oxides-on-semiconductors as a new physical system for device development.

Main Methods:

  • Atomic-level structural and chemical modifications of oxide-semiconductor interfaces.
  • Characterization of inversion charge and heterojunction properties.
  • Fabrication and analysis of novel semiconductor devices.

Main Results:

  • Systematic manipulation of inversion charge through atomic-level control of oxide structure.
  • Demonstration of tunable heterojunction band offsets and alignments.
  • Successful creation of an electrical interface between polar oxides and semiconductors that is free of interface charge.

Conclusions:

  • Atomic-level understanding and manipulation are key to controlling electrical properties in crystalline oxides-on-semiconductors.
  • This work introduces a new paradigm for metal oxide semiconductor devices using novel oxide-semiconductor interfaces.
  • The developed physical system offers extensive potential for future solid-state electronics innovation.