Related Experiment Videos
Transition temperature of ferromagnetic semiconductors: a dynamical mean field study
A Chattopadhyay1, S Das Sarma, A J Millis
1IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120, USA.
Physical Review Letters
|December 12, 2001
Abstract:
We formulate a theory of doped magnetic semiconductors such as Ga(1-x)Mn(x)As which have attracted recent attention for their possible use in spintronic applications. We solve the theory in the dynamical mean field approximation to find the magnetic transition temperature T(c) as a function of magnetic coupling strength J, carrier density n, and Mn density x. We find that T(c) is determined by a subtle interplay between carrier density and magnetic coupling.