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Large magnetoresistance effect due to spin injection into a nonmagnetic semiconductor
G Schmidt1, G Richter, P Grabs
1Physikalisches Institut, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany.
Physical Review Letters
|December 12, 2001
Abstract:
A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a nonmagnetic semiconductor, is presented. The effect results from the suppression of a spin channel in the nonmagnetic semiconductor and can theoretically yield a positive magnetoresistance of 100%, when the spin flip length in the nonmagnetic semiconductor is sufficiently large. Experimentally, our devices exhibit up to 25% magnetoresistance.