Analysis of high purity graphite and silicon carbide by direct solid sampling electrothermal atomic absorption...

Area of Science:

• Analytical Chemistry
• Materials Science

Background:

• Accurate determination of impurity elements in graphite and silicon carbide is crucial for material quality control.
• Traditional methods for analyzing these materials can be complex and time-consuming.

Purpose of the Study:

• To develop and validate a direct solid sampling method for analyzing impurity elements in graphite and silicon carbide powders.
• To assess the effectiveness of in-situ analyte/matrix separation using electrothermal atomic absorption spectrometry.

Main Methods:

• Solid sampling electrothermal atomic absorption spectrometry (ETAAS) with a boat technique and transversely heated graphite tube.
• Direct analysis of graphite and silicon carbide powders for multiple impurity elements.
• In-situ analyte/matrix separation strategies were optimized.

Main Results:

• Effective in-situ analyte/matrix separation was achieved for all analytes in graphite and for most in silicon carbide.
• Low detection limits in the ng g⁻¹ and sub-ng g⁻¹ range were obtained for most analytes.
• Quantification using aqueous calibration standards demonstrated accuracy, verified by instrumental neutron activation analysis.

Conclusions:

• Direct solid sampling ETAAS is a suitable technique for the direct analysis of impurity elements in graphite and silicon carbide.
• The method offers high sensitivity and accuracy, minimizing sample preparation requirements.
• The technique provides a reliable alternative for material characterization and quality control.